Implantation of Cu onto ZnTe thin film using plasma focus device for optoelectronic applications

Abstract In the current work, we have doped Cu onto ZnTe thin films at different power (0.0, 0.5, 1.0, 1.5, and 2.0 kJ) by using the Egyptian Atomic Energy Authority-Plasma Focus Device (EAEA-PFD). The argon operating gas at different pressure provides the huge appropriate radiation energy to deposit crystalline ZnTe films. Doping Cu onto ZnTe thin films performed by successive pulses of plasma focuses energies. The elemental constituents were characterized by an energy-dispersive X-ray. The crystallographic structure, the lattice strain, and the crystallite size were studied by the X-ray diffraction pattern. It is noted that the average crystallite size increases with increasing the doping power, but the lattice strain decreases after exposure to the plasma focus power. Both transmission and reflection in the full range of wavelengths extended from 400 to 2500 nm for pure ZnTe and ZnTe doped with Cu were measured. The refractive index and film thickness were calculated using the envelope method described by Swanepoel. Optical studies showed increasing in the refractive index and decreasing in the energy gap with increasing the successive plasma power of Cu. As a function of frequency, the AC conductivity was measured at different plasma focus power for pure ZnTe and ZnTe doped with Cu.