Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film

Abstract Carbon ions with an energy of 30 keV have been implanted into amorphous In 2 O 3 thin films at doses of 1×10 15 –2×10 16 cm −2 . After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In 2 O 3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.