A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions

A robust and low cost Si RFSOI Power Transistor which can deliver +31dBm output power with 74% of Power Added Efficiency (PAE) and 18dB of Gain has been optimized for 4G & 5G sub-6GHz Power Amplifier (PA). By means of innovative characterizations combining RF aging tests and modeling, it is proved that this great performance can be achieved while maintaining a very high level of reliability of the PA transistor.