PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

Abstract PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of ~1.4 × 10 20  cm −3 , the resistivity of the PdGe contact is found to be twice higher than that of undoped Ge. Ga doping has no influence on the Pd reaction with Ge. However, the doping process and the Salicide process led to the formation of Ga-Pd defects in both sides of the PdGe/Ge interface, resulting from Ga and Pd co-segregation on Ge dislocation loops.