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Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing
Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing
2021
Yuhei Wada
Hidetoshi Mizobata
Mikito Nozaki
Takuma Kobayashi
Takuji Hosoi
Hideki Sakurai
Tetsu Kachi
Takayoshi Shimura
Heiji Watanabe
Keywords:
Materials science
Annealing (metallurgy)
MOSFET
ultra high pressure
Optoelectronics
p channel
Correction
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