The optimal profile design for SJ-MOSFET fabricated by double-ion-implantation and multi-epitaxial method

We investigated the profile dependency of specific on-resistance (R on A) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the R on A characteristics because the profile affects the electron mobility (mue) in the drift region. The n-column profile was modulated by the column diffusion time (t diff ) in this experiment. The optimal t diff achieved minimal R on A under the high-temperature and high-current-density conditions.