Optimized Growth of Titanium Nitride Films Using Plasma-Enhanced Atomic Layer Deposition

Dhruv Fomra,Ray Secondo,Vitaliy Avrutin,N. Izyumskaya,Kai Ding,Ü. Özgür,Nathaniel Kinsey

Optimized Growth of Titanium Nitride Films Using Plasma-Enhanced Atomic Layer Deposition

2018

Dhruv Fomra
Ray Secondo
Vitaliy Avrutin
N. Izyumskaya
Kai Ding
Ü. Özgür
Nathaniel Kinsey

We investigate and find that the quality of titanium nitride grown at 350°C and 375°C using atomic layer deposition on silicon and sapphire substrates respectively are approaching the metallicity of sputtered films.

Keywords:

Atomic layer deposition
Titanium nitride
Plasma
Materials science
Inorganic chemistry
Sapphire
Optoelectronics
Silicon
Nonlinear optics

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