Enhancement of the porous silicon layer photoluminescence with a thin cerium sulfate films

The photoluminescence (PL) of the porous silicon (PS) can be enhanced by coating it with a thin cerium sulfate (Ce (SO4)2) films. The cerium sulfate (Ce (SO4)2) films were deposited by using electrochemical technique on porous silicon (PS) prepared by electrochemical anodization of P-type (100) Si. The surface bond configuration of PS was monitored by Fourier transmission infrared spectroscopy (FTIR) and it was found that the PS surface was oxidized after metallization. The presence of cerium and sulfur in PS is shown from scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX). The photoluminescence (PL) measurements on PS and (Ce (SO4)2) coated PS shows that it is desirable to deposit (Ce (SO4)2) for 30 min.