Effective model for $A_{2g}$ Raman signal in URu$_2$Si$_2$.

We propose an effective model to describe the $A_{2g}$ signal in Raman scattering experiments in the URu$_{2}$Si$_{2}$ compound. We follow the scheme proposed earlier by Khveshchenko and Wiegmann [Phys. Rev. Lett. 73, 500 (1994)] to calculate the $A_{2g}$ scattering vertex. We extract the imaginary part of a two-point current-current correlation function and compare it directly with the Raman response. We obtain an inelastic peak at $A_{2g}$ channel owing to the interplay between a local staggered ordering and a possible quantum spin liquid behavior. Our results offer an explanation for the electronic Raman scattering experiments at the hidden order phase in URu$_{2}$Si$_{2}$ compound [Phys. Rev. Lett. 113, 266405 (2014)].