BiCMOS technology improvements for microwave application

The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has f T /f max of 216/177 GHz and BV cb0 of 5.2 V. The high-voltage NPN has 12 V BV cb0 , and f T /f max of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz.