GaN laser diodes for commercializing quantum technologies
2021
Quantum technologies containing key GaN laser components will enable a new generation of
precision sensors, optical atomic clocks and secure communication systems for many
applications such as next generation navigation, gravity mapping and timing since the AlGaInN
material system allows for laser diodes to be fabricated over a wide range of wavelengths from
the u.v. to the visible.
We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth,
wavelength and power requirements suitable for quantum sensors such as optical clocks and
cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in
strontium+ ion optical clocks at 422 nm, the [5s2
1S0-5p1P1] cooling transition in neutral strontium
clocks at 461 nm and the [5s2s1/2 − 6p2P3/2] transition in rubidium at 420 nm.
Several approaches are taken to achieve the required linewidth, wavelength and power, including
an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback
(DFB) GaN laser diode.
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