TFT, an electronic apparatus using the manufacturing method and the thin film transistor

The substrate (201) a gate electrode (202) on the provided, then the insulating layer as to cover the gate electrode (202) to (203) is provided, then the semiconductor layer (204) formed on the insulating layer (203), then the semiconductor layer (204) and laminating steps of crystallization-inducing metal layer (208) provided on (FIG. 2 (a) ~ (e)), at least, of the crystallization inducing metal layer (208), the channel of the semiconductor layer 204 above the removal step and (FIG. 2 (f) ~ FIG 3 (a)) to remove the portion located on the region, the source and drain regions positioned on respective sides the channel region of the semiconductor layer (204) (206) there are, and, above the crystallization inducing metal layer (208), respectively, and the electrode forming step of providing a source and drain electrode (207) (FIG. 2 (e)), heating the crystallization inducing metal layer (208) to By includes a heating step of forming a silicide layer of a crystallization-inducing metal (208) (FIG. 3 (b) ~ (c)).