Bulk-Referenced Metal-Oxide Semiconductor Transistor Modeling With BSIM: A systematic approach to facilitate symmetric characteristics

In High-Performance Radio-frequency (RF) circuits design, accurate modeling of harmonic distortion characteristics is very important. For this purpose, the bulk-referenced Berkeley Short-Channel IGFET Model (BSIM)-Bulk model is better than the source-referenced BSIM4 model in using planar metalnoxide semiconductor (MOS) technology nodes, such as the 45/40-nm node, the 32/28-nm node, and the 22/20-nm node by integrated circuit (IC) foundries, e.g., TSMC and Samsung. It can fulfill all symmetry tests. The first-order, second-order, and third-order partial derivatives of drain current with respect to drain-source voltage are continuous at V DS equal to zero.