Investigation on thin gate oxide behavior for CMOS devices

The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties, including EOT, NBTI, mobility and Ion-Ioff, were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose of this work to develop methods for improving the device performance through optimization of the thickness and nitrogen dose of the thin gate dielectric layer.