Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments

Abstract Systematic investigations of the reverse annealing effect after radiation damage have been performed in particular for the change of the effective impurity concentration. The pronounced long term anneal observed at room temperature was further investigated by isochronal and isothermal studies. In order to demonstrate the radiation hardness of silicon detectors during 10 years of LHC operation an experiment was started at a higher temperature which compressed the real operational scenario to about 10 months.