Relation entre proprietes electriques et defauts de reseau dans ZnSiAs2 Partie I—analyse de l'energie d'ionisation

Abstract The electrical properties of crystals of the ternary semiconducting compound ZnSiAs 2 grown either by horizontal vapor phase transport or by the Bridgman method are reported. The resistivity and the Hall coefficient in the temperature range 77–300 K or 4.2–300 K have been measured and explained taking into account the asymmetry of the effective mass. All crystals are p -type with only one acceptor energy level between 7 × 10 −3 eV and 0.32 eV, and are generally highly compensated. Annealing in zinc or arsenic vapor at 873 K induces a shift of the energy level vs annealing time. The position of the energy level vs annealing time has been explained in terms of intrinsic defects such as Schottky defects (As or Zn vacancies). The latter are accompanied by anti-structural disorder on the zinc sites. The different values of the energy levels created by the Schottky defects are attributed to a concentration effect; this may lead to the formation of an impurity band in some samples.