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High Reliability SRAM Development for 40nm Embedded Spilt Gate-MONOS
High Reliability SRAM Development for 40nm Embedded Spilt Gate-MONOS
2014
S. Okamoto
Keiichi Maekawa
Yoshiyuki Kawashima
Kazutoshi Shiba
Hideki Sugiyama
Masao Inoue
Akio Nishida
Keywords:
Static random-access memory
Electronic engineering
Materials science
Computer science
Embedded system
Correction
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