On Some Modern Simulation Techniques for Studying THz ATT Sources

Great demand of suitable terahertz (THz) sources requires optimized design and appropriate simulation tool for designing and investigating the device capability at the design spectrum before actual fabrication. Design and simulation of complex devices like THz avalanche transit time (ATT) diodes require comprehensive and accurate simulation model for small-signal, large-signal and noise simulation before the actual fabrication. This chapter is devoted to summarize these three types of simulation methodologies for THz ATT sources.