Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

Abstract Heterojunctions based on p-CuIn 3 Se 5 crystals are fabricated by putting naturally cleaved n-GaSe thin wafers onto polished surface of p-CuIn 3 Se 5 wafers. The current–voltage characteristics and mechanisms of current flow in the investigated heterojunctions are analyzed. The photovoltaic effect revealed in the fabricated structures is discussed. It is shown that the fabricated photosensitive heterojunctions are promising for the development of selective analysers of linearly polarized radiation.