1200 V-trench-IGBT study with square short circuit SOA

In this paper, the authors discuss the design of a new 1200 V trench IGBT structure. The combination of well-designed trench cell geometry and a favourably adjusted vertical carrier concentration profile leads to a trench IGBT chip with both low static and dynamic losses and a degree of ruggedness similar to state-of-the-art planar cell nonpunch-through (NPT) IGBTs, especially excellent gate oxide properties, high turn-off capability and a square short circuit safe operating area up to 1200 V.