DMOS transistor with an increased breakdown voltage and to methods of manufacture.

DMOS transistor of the depletion type comprises a slit in an electrode material, which allows the incorporation of a dopant species into the underlying semiconductor material. During a subsequent dopant diffusion, a coherent well region is obtained which has an increased lateral extension, without having a depth is increased. The source dopant is implanted after masking the gap. It is carried out, an additional channel implantation before forming the gate dielectric material.