Applications of Silicon-Bridged Oligothiophenes to Organic FET Materials

Trisilanylene-bridged oligothiophenes were synthesized, and their vapor-deposited and spin-coated films were examined as p-type semiconductors in field-effect transistors (FET). Of these, the best FET performance was achieved by using tris[(ethylquinquethiophenyl)dimethylsilyl]methylsilane as the active material, whose field-effect mobility and on/off ratio were determined to be 6.4 × 10-2 cm2 V-1 s-1 and 104, respectively. Interestingly, the trisilanylene-bridged oligothiophenes were found to be photoactive and the FET activity of the films was suppressed, when irradiated in air (254 nm), being potentially usable as patternable FET materials.