The Lanthanide Doping Effects on the Electrical Properties of Bi4Ti3O12 Thin Films Fabricated on Silicon Substrates

Lanthanides (La3+, Nd3+, Sm3+ and Eu3+) doped Bi4Ti3O12 (BIT) films fabricated on p-type Si(100) substrates by a sol-gel spin coating process. The films were characterized by X-ray diffractometer and scanning electron microscope. Memory windows calculated from the measured C-V hysteresis curves were approximately 3.5, 0.85, 0.8, and 0.54 V for La-, Nd-, Sm-, and Eu-doped BIT films with a sweep voltage of ± 10 V, respectively. The effects of lanthanides substitution for Bi3+ in the perovskite layer on the electrical properties, such as C-V and I-V characteristics, have been reported.