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Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)
Characteristics of Circular β-Ga2O3 MOSFETs with High Breakdown Voltage (>1,000 V)
2020
Kyu Jun Cho
Mun Jae Kyoung
Woojin Chang
Hyun Wook Jung
Keywords:
MOSFET
Breakdown voltage
Materials science
Composite material
Correction
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