Zero-biased solar-blind photodetectors based on AlN/β-Ga2O3 heterojunctions

Monoclinic gallium oxide (β-Ga2O3) has drawn much attention in solar-blind detection because of its unique characteristics such as good thermal and chemical stability, intrinsic visible/solar blind, high breakdown electric field, etc. However, the relatively slow response hinders the actual applications of β-Ga2O3 photodetectors. In this work, β-Ga2O3 photodetectors with a fast response speed of 320 ns has been developed based on AlN/β-Ga2O3 heterojunctions. Moreover, the AlN/β-Ga2O3 heterojunction photodetector can work at 0 V with a responsivity of 7.0 mA/W and the detection sensitivity reaches up to 1.25 × 1013 cm Hz1/2 W−1. The results reported in this work indicate that AlN/β-Ga2O3 heterojunctions are feasible for solar-blind photodetectors with fast response and high sensitivity.