Noise properties of semiconductor ring lasers
2008
We analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the
carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional
regime. We analytically investigate the influence of complex backscattering coefficient when the two modes
are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum
represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor
of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy
exchange between the total field and the medium and behaves similarly to the standard relative intensity noise
for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results
is found.
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