Thermal behavior of 1.55 µm (100) InAs/InP-based quantum dot lasers

Unlike InAs/GaAs quantum dot lasers, in 1.55µm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (∼40K) and accounts for ∼94% of J th at room temperature with a T o of ∼72K from 220K—290K.