1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response

1.32 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots (QDs) based P-N diodes is presented. High growth temperature of the upper cladding layer (670°C) induces a significant degradation and blueshift of the QDs emission, showing the importance to maintain a low thermal budget during the entire growth step.