Verification of saturation velocity lowering in MOSFET's inversion layer

With reduction of the MOSFET's channel length L, the drain saturation current of MOSFET's is determined by the saturation velocity v/sub sat/ in the inversion layer. Hence, the modeling of v/sub sat/ becomes very important. In this paper, v/sub sat/ in the inversion layer has been examined by using simulation experiment. New parameter values for v/sub sat/ model in the inversion layer are proposed. In order to verify the v/sub sat/ model, the impurity profiles of MOSFET's are calibrated to fit the threshold voltage V/sub th/-L characteristics. Then, we validate new v/sub sat/ model by comparing the experiments of I/sub D/-V/sub D/ characteristics of 0.35-/spl mu/m CMOS with the simulations using the energy transport model (ETM).