Evaluation of the gate oxide transformed by ion implantation

Abstract Ion implantation-induced damage to the gate oxide of antenna MOS capacitors has been investigated. It is confirmed that ion implantation into the MOS capacitors causes charge-induced damage and ion bombardment-induced damage. The degradation of the gate oxide due to ion implantation varies according to the relation between the projected range and the thickness of the polysilicon electrode. The mechanism of the oxide damage is discussed based on the results of current-voltage measurements and structural analyses by ESR and FTIR-ATR.