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Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
2019
Holger Schlichting
Tomasz Sledziewski
Anton J. Bauer
Tobias Erlbacher
Keywords:
Engineering physics
Metallurgy
Transistor
Materials science
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