155nm-span multi-wavelength DFB laser array fabricated by selective area growth

Selective area growth (SAG) technology has been added to an established InP monolithic integration platform to fabricate arrays of multi-wavelength distributed feedback (DFB) lasers. The local epitaxy growth rate is controlled by the SiO 2 mask width, and different quantum well (QW) thicknesses can be obtained in one run. The laser wavelengths span from 1447 nm to 1602 nm. The DFB lasers may include amplifying sections at the front and/or rear side. Output power up to 18 mW is achieved. This technology opens up possibilities to integrate various passive and active components such as lasers, modulators, detectors with different operating wavelengths monolithically on one wafer with less regrowth steps and reduced fabrication complexity.