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Acemap > Paper > 20pHT-4 SiC多形結晶の電子照射誘起構造変化に及ぼす電子励起効果と弾き出し効果(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))

20pHT-4 SiC多形結晶の電子照射誘起構造変化に及ぼす電子励起効果と弾き出し効果(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))

2010 
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