Nonvolatile Memory Effects of NiO Layers Embedded in Al2O3 High-k Dielectrics Using Atomic Layer Deposition

Nonvolatile memory effects of Al 2 O 3 /NiO/Al 2 O 3 nanolaminates deposited through atomic layer deposition were investigated. The memory structure was constructed without interruption in the order of Al 2 O 3 /NiO/Al 2 O 3 thin-film deposition on Si wafers. The memory characteristics were analyzed through high frequency capacitance―voltage measurement along with high resolution images of the aforementioned nanolaminates. The defective nature of nickel oxide produces a significantly large memory window; the largest memory window observed was 13.8 V. The peculiar memory characteristics were understood in terms of the constituent tunnel and charge-trapping layers in the metal gate/high-k oxide/semiconducting oxide/high-k oxide/Si memory structures.