Structural characterization and optoelectronic properties of boron thermally diffused Si (400)

Thermal diffusion of boron into silicon single crystal at 1100 °C, followed by annealing, in inert atmosphere, has been investigated with respect to corresponding optoelectronic properties. A layer of boron powder, deposited on a silicon (400) wafer, was used as a dopant source for B. The cold resistance response of the films with respect to light of different wavelengths was used for the quantification of their optoelectronic properties. A correlation between the optoelectronic behavior and the structural characterization of the produced samples was also realized.