Growth and characteristics of 2 inch 6H-silicon carbide

For the growth of 2 inch 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavorable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.