Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

Physical parameters calibration (dielectric and alloy properties) of Si$_{1-X}$Ge x alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UV-NLA) of this material for Si/ Si$_{1-X}$Ge x based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si$_{1-X}$Ge x CMOS integration process.