Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions

Summary form only given. In conclusion, threshold currents as low as 0.67 mA are obtained for impurity induced disordered (IID)-defined InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent material from the same wafer. SEM images of the active region and near-field EL measurements indicate that the Zn-IID has resulted in confinement of carriers in the lasers. Such confinement should enable the creation of smaller diameter VCLs in the future.