Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile

In this paper, the effects of boron and fluorine in the SiO2/Si interface region with the optimized nitrogen profile are described. Fluorine in the interface region has been found to terminate the interface states and improve negative bias temperature instability (NBTI). However, fluorine enhances the boron penetration. The ideal nitrogen profile has been achieved in order to suppress NBTI characteristics by applying the SiN/SiO2 stack structure.