Memory Cell for High-Density Arrays Based on a Multiterminal Superconducting-Ferromagnetic Device

Over the last several decades, significant effort has been dedicated to developing memory for energy-efficient cryogenic computers. The proposed memory cells involving magnetic junctions typically have an area far exceeding that of the junction itself, due to the lack of both an area-efficient cell selector within the RAM array, and a compact sensor. The device described here solves both problems: Its multiple terminals allow for implementation of efficient addressing within the RAM array, and its vertically integrated design provides compact sensing (readout) using an $S\ensuremath{-}I\ensuremath{-}{S}^{\ensuremath{'}}$ junction.