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Improved electron mobility in InN/GaN heterostructure
Improved electron mobility in InN/GaN heterostructure
2021
Taiki Ito
Junichiro Kitamura
Kenta Tsukamoto
Shuto Murakumo
Hirokazu Sasaki
Ryota Doi
Daiki Nagatsuyu
Toshiki Makimoto
Keywords:
Materials science
Heterojunction
Optoelectronics
Electron mobility
Correction
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