A method for analysis and profiling of boron, carbon and oxygen impurities in semiconductor wafers by recoil atoms in heavy ion beams

Abstract A method based on identification of recoil atoms in heavy ion beams, by using a ( ΔE , E ) measuring system, is described. The two parameter ( ΔE , E ) spectra, obtained with the aid of a computer, shows a good separation between carbon and oxygen recoils originating from a 300 μ;m thick silicon wafer bombarded with a 70 MeV sulphur beam. Profiling depths 10–20 μm and sensitivities close to 10 16 atoms/cm are estimated.