MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

Abstract For the MOVPE growth of Er-doped InP layers we have synthesized tris(methylcyclopentadienyl)erbium, (Er(MeCp) 3 ), and tris(isopropylcyclopentadienyl)erbium, (Er(IpCp) 3 ) and used these compounds as solid and liquid precursors, respectively. The InP:Er layers were grown to study the incorporation behavior and the optical excitation and decay mechanisms of this rare earth element in a III–V compound semiconductor host crystal. Secondary ion mass spectrometry (SIMS) revealed Er concentrations up to 2×10 19 cm -3 with a homogeneous Er distribution in the layer. Samples with these high doping concentrations have a semi-insulating character, probably a sign of a deep level correlated to the Er incorporation. A strong Er 3+ -related signal at 1.54 μm could be detected in low temperature photoluminescence experiments for the highly doped InP:Er samples. Codoping of the InP:Er samples with S or Zn has little influence on the shape and intensity of the Er emission.