Interband carrier transfer in GaAs at high pressures

Abstract The study of the variation of the resistivity of n-type GaAs as a function of pressure 1 is extended to 45 kbar and is analysed in terms of the progessive transfer of carriers from low mass [000] to high mass [100] states. Values found for the sub-band gap pressure coefficient ∂ Δ E 000 → 100 / ∂ P and for the mobility in the [100] conduction band minima are 1.01 ± 0.04 eV /kbar and 150 ± 25 cm 2 /V sec respectively.