Kinetics modeling and growth of Si layers by Liquid Phase Epitaxy Driven by Solvent Evaporation (LPESE)

Abstract Crystalline Si thin films on low-cost substrates are expected to be an alternative to bulk Si for PV applications. Liquid Phase Epitaxy (LPE) is one of the most suitable techniques for the growth of high quality Si layers since LPE is performed under almost equilibrium conditions. We investigated a growth technology which allows growing Si epitaxial thin films in steady temperature conditions through the control of solvent evaporation from a metallic solution saturated with silicon: Liquid Phase Epitaxy by Solvent Evaporation (LPESE). An analytical model aiming to predict solvent evaporation and Si crystallization rate is described and discussed for three solvents (Sn, In and Cu). Growth experiments are implemented in order to check the validity of the model. Experimental set up and growth procedure are presented. Si thin films were grown from Sn–Si and In–Si solution at temperatures between 900 and 1200 °C under high vacuum. The predicted solvent evaporation rate and Si growth rate are in agreement with the experimental measurements.