Strain sensing device using reduced graphene oxide and fabrication method thereof

The present invention has an effect of forming a field effect transistor (FET) where the reduced graphene oxide (R-GO) on a flexible substrate is an active layer, and sensing deformation through the active layer of the FET. According to the present invention, a deformation sensing element comprises: a flexible substrate; a gate electrode formed on the flexible substrate; a gate insulator film covering the gate electrode, and including a part consisting of a flexible material; an active layer formed above the gate insulator film, and consisting of reduced graphene oxide capable of sensing deformation; and a source and a drain electrode formed on the active layer.