High Performance AlGaInP Light-emitting Diodes

Summary form only given. Significant progress in AlGaInP material quality has been made in the last decade using organometallic vapor phase epitaxy. Double heterostructure AlGaInP/GaInP/AlGaInP lasers emitting in the 650-680 nm wavelength range have been commercially available for the last five years. However, the development of high-brightness AlGaInP LEDs has been slower due to slightly different requirements in material properties and device structures. One of the problems experienced by the researchers in developing AlGaInP LEDs was the issue of poor current spreading. This is because the upper confining layer employed in the DH structure, usually high aluminum containing alloys, is highly resistive.