Oxidation kinetics of silicon carbide in steam at temperature range of 1400 to 1800 °C studied by laser heating

Abstract As expected for accident tolerant fuels, the investigation of steam oxidation for silicon carbide under beyond design basis accident scenarios is needed. Many studies focused on steam oxidation of SiC at temperatures up 1600 °C have been reported in the literature. However, behavior of SiC in steam at temperatures above 1600 °C still remains unclear. To complete this task, we have designed and manufactured a laser heating facility for steam oxidation at extreme temperatures. With the facility, we report the first results on the steam oxidation behavior of SiC in the temperature range of 1400–1800 °C for short term exposure of 1–7 h under atmospheric pressure. Based on the mass change of SiC samples, parabolic oxidation rate and linear volatilization rate were calculated to be k p = exp ( 1.44 ± 1.8 + − 96 ± 30 [ kJmo l − 1 ] R T [ K ] ) , and k l = exp ( 4.7 ± 0.6 + − 95 ± 10 [ kJmo l − 1 ] R T [ K ] ) . The oxidation layer appears to be maintained at 1800 °C in steam, but the bubble formation phenomenon suggests other volatilization reactions may limit its life.