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Hybrid-gate structure designed for high-performance normally-off p-GaN HEMT
Hybrid-gate structure designed for high-performance normally-off p-GaN HEMT
2020
Di Niu
Wang Quan
Wei Li
Changxi Chen
Xu JianKai
Jiang Lijuan
Chun Feng
Xiao Hongling
Wang Qian
Xiangang Xu
Wang Xiaoliang
Keywords:
normally off
Materials science
High-electron-mobility transistor
Optoelectronics
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