Formation of stoichiometric SrRuO3 electrodes for PZT capacitors by pulsed-MOCVD

SrRuO 3 films were deposited at 300-500°C on Pb(Zr 0.4 , Ti 0.6 )O 3 -covered Ir/SiO 2 /Si substrates by metallorganic chemical vapor deposition (MOCVD). Through the pulsed introduction of a source gas mixture (pulsed-MOCVD), the Ru/(Ru + Sr) ratio became unity above 350°C due to a similar deposition rate for SrO and RuO x components in the film. It became unity at 450°C in spite of the increased input-gas flow rate of the Ru source under the fixed Sr source and we obtained films consisting of crystalline stoichiometric SrRuO 3 . This demonstrated that good crystalline stoichiometric SrRuO 3 film was reproducible by pulsed-MOCVD. Excellent fatigue properties and ferroelectricity were obtained from the SRO/PZT/Ir capacitor.